A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). Band diagram of GaAs/AlGaAs heterojunction-based HEMT, at equilibrium.Ī high-electron-mobility transistor ( HEMT), also known as heterostructure FET ( HFET) or modulation-doped FET ( MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e.
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